Infineon Technologies - IPA041N04NGXKSA1

IPA041N04NGXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPA041N04NGXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet IPA041N04NGXKSA1 Datasheet
In Stock421
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 70 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 70 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 280 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0041 ohm
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