IPB067N08N3GATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB067N08N3GATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 320 A;
Datasheet	IPB067N08N3GATMA1 Datasheet
In Stock	1,073

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	80 A
Maximum Pulsed Drain Current (IDM):	320 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	136 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0067 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	150 mJ
Other Names:	IPB067N08N3G IPB067N08N3 GDKR-ND IPB067N08N3 GTR-ND IPB067N08N3 GDKR IPB067N08N3GATMA1DKR IPB067N08N3GATMA1CT IPB067N08N3GATMA1TR IPB067N08N3 G-ND SP000443636 IPB067N08N3 GCT-ND IPB067N08N3 GCT IPB067N08N3 G
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	80 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	80 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,073	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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