Infineon Technologies - IPB108N15N3GATMA1

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IPB108N15N3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB108N15N3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 332 A; JESD-30 Code: R-PSSO-G2;
Datasheet IPB108N15N3GATMA1 Datasheet
In Stock4,269
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 83 A
Maximum Pulsed Drain Current (IDM): 332 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0108 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 330 mJ
Other Names: IPB108N15N3 GDKR
IPB108N15N3 GCT
IPB108N15N3GATMA1CT
IPB108N15N3 G-ND
SP000677862
IPB108N15N3 GTR-ND
IPB108N15N3G
IPB108N15N3 GCT-ND
IPB108N15N3 G
IPB108N15N3GATMA1DKR
IPB108N15N3GATMA1TR
2156-IPB108N15N3GATMA1
IPB108N15N3 GDKR-ND
INFINFIPB108N15N3GATMA1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
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