Infineon Technologies - IPD200N15N3GATMA1

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IPD200N15N3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD200N15N3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (ID): 50 A;
Datasheet IPD200N15N3GATMA1 Datasheet
In Stock14,896
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 170 mJ
Other Names: IPD200N15N3GATMA1CT
IPD200N15N3GATMA1TR
IPD200N15N3GATMA1DKR
SP001127820
IPD200N15N3GATMA1-ND
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
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