Infineon Technologies - IPD30N03S4L14ATMA1

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IPD30N03S4L14ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD30N03S4L14ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
Datasheet IPD30N03S4L14ATMA1 Datasheet
In Stock60,054
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 120 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0136 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 16 mJ
Other Names: IPD30N03S4L-14DKR
IPD30N03S4L-14TR
IPD30N03S4L-14DKR-ND
2156-IPD30N03S4L14ATMA1
SP000275919
IPD30N03S4L14ATMA1TR
IPD30N03S4L-14-ND
IPD30N03S4L14ATMA1DKR
INFINFIPD30N03S4L14ATMA1
IPD30N03S4L-14CT
IPD30N03S4L-14CT-ND
IPD30N03S4L-14TR-ND
IPD30N03S4L14
IPD30N03S4L-14
IPD30N03S4L14ATMA1CT
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Additional Features: ULTRA LOW RESISTANCE
Reference Standard: AEC-Q101
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