IPD350N06LGBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD350N06LGBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; JEDEC-95 Code: TO-252AA; No. of Terminals: 2;
Datasheet	IPD350N06LGBTMA1 Datasheet
In Stock	10,127

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	29 A
Maximum Pulsed Drain Current (IDM):	116 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.035 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	80 mJ
Other Names:	IFEINFIPD350N06LGBTMA1 IPD350N06L G-ND IPD350N06L G IPD350N06LG IPD350N06LGBTMA1DKR IPD350N06LGBTMA1TR SP000443746 2156-IPD350N06LGBTMA1 IPD350N06LGBTMA1CT
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,127	-	-

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