Infineon Technologies - IPD50R1K4CEAUMA1

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IPD50R1K4CEAUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50R1K4CEAUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-252;
Datasheet IPD50R1K4CEAUMA1 Datasheet
In Stock2,105
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.8 A
Maximum Pulsed Drain Current (IDM): 8.8 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 42 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.4 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 49 mJ
Other Names: 448-IPD50R1K4CEAUMA1DKR
ROCINFIPD50R1K4CEAUMA1
IPD50R1K4CEAUMA1-ND
448-IPD50R1K4CEAUMA1TR
448-IPD50R1K4CEAUMA1CT
2156-IPD50R1K4CEAUMA1
SP001396808
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 500 V
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