Infineon Technologies - IPD50R950CEAUMA1

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IPD50R950CEAUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50R950CEAUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 12.8 A;
Datasheet IPD50R950CEAUMA1 Datasheet
In Stock3,644
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 68 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 12.8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 500 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .95 ohm
Moisture Sensitivity Level (MSL): 3
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