Infineon Technologies - IPD80P03P4L07ATMA1

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IPD80P03P4L07ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD80P03P4L07ATMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
Datasheet IPD80P03P4L07ATMA1 Datasheet
In Stock8,370
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0068 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 135 mJ
Other Names: IPD80P03P4L07ATMA1CT
IPD80P03P4L-07INCT-ND
IPD80P03P4L-07
IPD80P03P4L07
IPD80P03P4L-07INTR-ND
SP000396296
IPD80P03P4L-07INDKR
IPD80P03P4L-07INCT
IPD80P03P4L-07-ND
INFINFIPD80P03P4L07ATMA1
IPD80P03P4L-07INDKR-ND
2156-IPD80P03P4L07ATMA1
IPD80P03P4L-07INTR
IPD80P03P4L07ATMA1TR
IPD80P03P4L07ATMA1DKR
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: AEC-Q101
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