Infineon Technologies - IPD90R1K2C3ATMA1

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IPD90R1K2C3ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD90R1K2C3ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;
Datasheet IPD90R1K2C3ATMA1 Datasheet
In Stock2,160
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.1 A
Maximum Pulsed Drain Current (IDM): 10 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.2 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 68 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 900 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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