Infineon Technologies - IPG20N06S2L-35A

IPG20N06S2L-35A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPG20N06S2L-35A
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 80 A; No. of Elements: 2; Reference Standard: AEC-Q101;
Datasheet IPG20N06S2L-35A Datasheet
In Stock930
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .035 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
930 $0.800 $744.000

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