IPG20N06S4L14ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPG20N06S4L14ATMA1
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Minimum DS Breakdown Voltage: 60 V; Moisture Sensitivity Level (MSL): 1;
Datasheet	IPG20N06S4L14ATMA1 Datasheet
In Stock	615

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	90 mJ
Other Names:	SP000705540
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	80 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	.0137 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
615	-	-

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