Infineon Technologies - IPI65R110CFD

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IPI65R110CFD by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI65R110CFD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Minimum DS Breakdown Voltage: 650 V; Qualification: Not Qualified;
Datasheet IPI65R110CFD Datasheet
In Stock371
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31.2 A
Maximum Pulsed Drain Current (IDM): 99.6 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 277.8 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .11 ohm
Avalanche Energy Rating (EAS): 845 mJ
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 31.2 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
371 $2.750 $1,020.250

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