Infineon Technologies - IPL60R650P6SATMA1

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IPL60R650P6SATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPL60R650P6SATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
Datasheet IPL60R650P6SATMA1 Datasheet
In Stock1,273
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 133 mJ
Other Names: IPL60R650P6SATMA1DKR
ROCINFIPL60R650P6SATMA1
2156-IPL60R650P6SATMA1
SP001163080
IPL60R650P6SATMA1CT
IPL60R650P6SATMA1TR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 16.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 5
Minimum DS Breakdown Voltage: 600 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .65 ohm
Moisture Sensitivity Level (MSL): 1
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