Infineon Technologies - IPL65R130C7AUMA1

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IPL65R130C7AUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPL65R130C7AUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IPL65R130C7AUMA1 Datasheet
In Stock1,452
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 89 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 75 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PSSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .13 ohm
Moisture Sensitivity Level (MSL): 2A
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