IPP076N15N5AKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPP076N15N5AKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3;
Datasheet	IPP076N15N5AKSA1 Datasheet
In Stock	302

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	130 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	112 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	448 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	150 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0076 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
302	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.