IPW65R041CFDFKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPW65R041CFDFKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet	IPW65R041CFDFKSA1 Datasheet
In Stock	288

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	68.5 A
Maximum Pulsed Drain Current (IDM):	255 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	500 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.041 ohm
Avalanche Energy Rating (EAS):	2185 mJ
Other Names:	IPW65R041CFDFKSA1-ND 448-IPW65R041CFDFKSA1 IPW65R041CFD IPW65R041CFD-ND SP000756288
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Maximum Drain Current (Abs) (ID):	68.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
288	-	-

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