Infineon Technologies - IRF200S234

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IRF200S234 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF200S234
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 417 W; Avalanche Energy Rating (EAS): 693 mJ; Transistor Application: SWITCHING;
Datasheet IRF200S234 Datasheet
In Stock868
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 312 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 417 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0169 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 693 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Maximum Drain Current (Abs) (ID): 90 A
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Pricing (USD)

Qty. Unit Price Ext. Price
868 $1.820 $1,579.760

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