IRF3315STRRPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF3315STRRPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet	IRF3315STRRPBF Datasheet
In Stock	961

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	21 A
Maximum Pulsed Drain Current (IDM):	84 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	94 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	3.8 W
Maximum Drain-Source On Resistance:	.082 ohm
Avalanche Energy Rating (EAS):	350 mJ
Maximum Feedback Capacitance (Crss):	160 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	150 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
961	-	-

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