Infineon Technologies - IRF440SCX

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IRF440SCX by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF440SCX
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Terminal Position: BOTTOM;
Datasheet IRF440SCX Datasheet
In Stock448
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 94 ns
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 123 ns
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .98 ohm
Avalanche Energy Rating (EAS): 700 mJ
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 500 V
Reference Standard: MIL-19500
Maximum Drain Current (Abs) (ID): 8 A
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