IRF5N4905 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF5N4905
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Qualification: Not Qualified;
Datasheet	IRF5N4905 Datasheet
In Stock	665

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	55 A
Maximum Pulsed Drain Current (IDM):	220 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.024 ohm
Avalanche Energy Rating (EAS):	330 mJ
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	55 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
665	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;