Infineon Technologies - IRF6612PBF

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IRF6612PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6612PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; JESD-30 Code: R-XBCC-N3; Case Connection: DRAIN;
Datasheet IRF6612PBF Datasheet
In Stock877
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 24 A
Maximum Pulsed Drain Current (IDM): 190 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Maximum Power Dissipation (Abs): 2.8 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0033 ohm
Avalanche Energy Rating (EAS): 37 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 136 A
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