Infineon Technologies - IRF7303TR

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IRF7303TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7303TR
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
Datasheet IRF7303TR Datasheet
In Stock2,947
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.9 A
Maximum Pulsed Drain Current (IDM): 20 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance: .05 ohm
Moisture Sensitivity Level (MSL): 2
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