Infineon Technologies - IRFG9113

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IRFG9113 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFG9113
Description P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFG9113 Datasheet
In Stock353
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .65 A
Maximum Drain Current (Abs) (ID): .65 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
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