Infineon Technologies - IRFH8311TRPBF

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IRFH8311TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH8311TRPBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
Datasheet IRFH8311TRPBF Datasheet
In Stock214
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 169 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 96 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 169 A
Maximum Drain-Source On Resistance: .0021 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
214 $0.403 $86.242

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