Infineon Technologies - IRFHM792TR2PBF

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IRFHM792TR2PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFHM792TR2PBF
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.4 W; Terminal Form: NO LEAD; Terminal Position: DUAL;
Datasheet IRFHM792TR2PBF Datasheet
In Stock53
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 14 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 10.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .195 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 10.2 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 3.4 A
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