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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRFI4212H-117P |
Description | N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Qualification: Not Qualified; Terminal Position: SINGLE; |
Datasheet | IRFI4212H-117P Datasheet |
In Stock | 867 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 11 A |
Maximum Pulsed Drain Current (IDM): | 44 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN OVER NICKEL |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 18 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T5 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .0725 ohm |
Avalanche Energy Rating (EAS): | 41 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 11 A |