Infineon Technologies - IRFS31N20DTRLP

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IRFS31N20DTRLP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFS31N20DTRLP
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 420 mJ; Terminal Form: GULL WING;
Datasheet IRFS31N20DTRLP Datasheet
In Stock17,580
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 124 A
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .082 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 420 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Peak Reflow Temperature (C): 260
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