Infineon Technologies - IRFS7430PBF

  1. Home
  2. Infineon Technologies - IRFS7430PBF
IRFS7430PBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRFS7430PBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Drain Current (Abs) (ID): 195 A; Maximum Operating Temperature: 175 Cel;
Datasheet IRFS7430PBF Datasheet
In Stock53
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 195 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 375 W
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 195 A
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
53 - -

Popular Products

Category Top Products

FDB44N25TM by Onsemi

FDB44N25TM

Onsemi

FDB44N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 44A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 176A Pulsed Drain Current, and 307W Power Dissipation in a RECTANGULAR package.
FDMS86101 by Fairchild Semiconductor

FDMS86101

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL;
LND150N8-G by Microchip Technology

LND150N8-G

Microchip Technology

LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
IRF9530 by Vishay Intertechnology

IRF9530

Vishay Intertechnology

Vishay Intertechnology's IRF9530 is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max IDM of 48A and EAS of 400mJ, making it suitable for high-power operations. With a max power dissipation of 88W and operating temp up to 150°C, it offers reliable performance in various environments.
AUIRFZ44NSTRR by Infineon Technologies

AUIRFZ44NSTRR

Infineon Technologies

AUIRFZ44NSTRR by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 160A and Max Power Dissipation of 94W. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
CSD18543Q3A by Texas Instruments

CSD18543Q3A

Texas Instruments

CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
PMV40UN2R by Nexperia

PMV40UN2R

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; No. of Elements: 1; Reference Standard: IEC-60134;
IRLML2502 by International Rectifier Hirel Products

IRLML2502

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
NTD2955T4G by Onsemi

NTD2955T4G

Onsemi

NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
FQB12P20TM by Fairchild Semiconductor

FQB12P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
FDN5630-F095 by Fairchild Semiconductor

FDN5630-F095

Fairchild Semiconductor

FDN5630-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.7A max drain current and 0.5W max power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating at up to 150°C, it features surface mount configuration and metal-oxide semiconductor technology for enhanced performance.
IRLML6401TR by Shenzhen Changyuntong Ic Design

IRLML6401TR

Shenzhen Changyuntong Ic Design

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Position: DUAL; Maximum Turn On Time (ton): 43 ns;
IRFP460 by Intersil

IRFP460

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 960 mJ;
IRFP460LC by Vishay Siliconix

IRFP460LC

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IRLML2502TR by International Rectifier Hirel Products

IRLML2502TR

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 33 A; Maximum Drain-Source On Resistance: .045 ohm;
IRF540SPBF by Vishay Siliconix

IRF540SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
IRFZ44NSTRL by International Rectifier Hirel Products

IRFZ44NSTRL

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
FQB34N20LTM by Onsemi

FQB34N20LTM

Onsemi

FQB34N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 640mJ and 0.08 ohm Drain-Source On Resistance.
NTD5867NLT4G by Onsemi

NTD5867NLT4G

Onsemi

NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
IRFR540ZTRPBF by Infineon Technologies

IRFR540ZTRPBF

Infineon Technologies

IRFR540ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 140A and EAS of 39mJ, operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals offers 0.0285 ohm RDS(ON) and 91W Pd max.