IRFS7434-7PPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFS7434-7PPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
Datasheet	IRFS7434-7PPBF Datasheet
In Stock	813

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	148 ns
Maximum Drain Current (ID):	240 A
Maximum Pulsed Drain Current (IDM):	1300 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	245 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	192 ns
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.001 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	880 mJ
Maximum Feedback Capacitance (Crss):	1060 pF
JEDEC-95 Code:	TO-263CB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	240 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
813	-	-

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