Infineon Technologies - IRFV260

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IRFV260 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFV260
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Form: PIN/PEG; Maximum Drain Current (Abs) (ID): 45 A;
Datasheet IRFV260 Datasheet
In Stock939
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 45 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XSFM-P3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .07 ohm
JEDEC-95 Code: TO-258AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 45 A
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