Infineon Technologies - IRG5U100HH06E

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IRG5U100HH06E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG5U100HH06E
Description N-Channel; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 920 ns; Nominal Turn On Time (ton): 100000 ns; Maximum Collector-Emitter Voltage: 600 V;
Datasheet IRG5U100HH06E Datasheet
In Stock616
NAME DESCRIPTION
Nominal Turn Off Time (toff): 920 ns
Maximum Collector Current (IC): 100 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 100000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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