Infineon Technologies - IRG5W50HF06A

  1. Home
  2. Infineon Technologies - IRG5W50HF06A
IRG5W50HF06A by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRG5W50HF06A
Description N-Channel; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 50000 ns; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 600 V; Nominal Turn Off Time (toff): 265 ns;
Datasheet IRG5W50HF06A Datasheet
In Stock510
NAME DESCRIPTION
Nominal Turn Off Time (toff): 265 ns
Maximum Collector Current (IC): 50 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 50000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.7 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
510 - -

Popular Products

Category Top Products

IRG4BC30UPBF by Infineon Technologies

IRG4BC30UPBF

Infineon Technologies

IRG4BC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. It has a toff of 320ns and tf of 150ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
IXGH10N170 by IXYS Corporation

IXGH10N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
IRG4BC30KDPBF by Infineon Technologies

IRG4BC30KDPBF

Infineon Technologies

IRG4BC30KDPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 28A max collector current. It has a 120ns fall time, 370ns turn off time, and can handle up to 100W power dissipation. Ideal for motor control applications due to its single configuration and flange mount package style.
2MBI150NC-120 by Fuji Electric

2MBI150NC-120

Fuji Electric

Fuji Electric's 2MBI150NC-120 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.3V, IC of 150A, and Pmax of 1100W. Ideal for POWER CONTROL applications due to its fast ton (650ns) and toff (850ns) times.
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.
ISL9V3036S3ST by Fairchild Semiconductor

ISL9V3036S3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
IRG4BC40UPBF by Infineon Technologies

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
IGW25T120FKSA1 by Infineon Technologies

IGW25T120FKSA1

Infineon Technologies

IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
HGTG20N60B3D by Intersil

HGTG20N60B3D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 200 ns;
NGTB15N120LWG by Onsemi

NGTB15N120LWG

Onsemi

NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
IKA10N65ET6XKSA2 by Infineon Technologies

IKA10N65ET6XKSA2

Infineon Technologies

IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.
IXA60IF1200NA by IXYS Corporation

IXA60IF1200NA

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 88 A; Nominal Turn On Time (ton): 110 ns;
IRG7PH50K10D-EPBF by International Rectifier

IRG7PH50K10D-EPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 30 V;
HGTP10N120BN by Harris Semiconductor

HGTP10N120BN

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
IKW40N60H3FKSA1 by Infineon Technologies

IKW40N60H3FKSA1

Infineon Technologies

IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
IRG4PC30UPBF by Infineon Technologies

IRG4PC30UPBF

Infineon Technologies

IRG4PC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 33ns, toff: 320ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
FGH40T120SMDL4 by Fairchild Semiconductor

FGH40T120SMDL4

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T4;