Infineon Technologies - IRG7PH37K10D-EPBF

IRG7PH37K10D-EPBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7PH37K10D-EPBF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 216 W; Maximum Collector Current (IC): 45 A; Maximum Rise Time (tr): 45 ns; Maximum Gate-Emitter Voltage: 30 V;
Datasheet	IRG7PH37K10D-EPBF Datasheet
In Stock	863

IRG7PH37K10D-EPBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	45 A
Maximum Power Dissipation (Abs):	216 W
Maximum Collector-Emitter Voltage:	1200 V
Maximum Rise Time (tr):	45 ns
Maximum Gate-Emitter Threshold Voltage:	7.5 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Maximum Fall Time (tf):	100 ns

Pricing (USD)

Qty.	Unit Price	Ext. Price
863	$4.240	$3,659.120

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