Infineon Technologies - IRG7PK35UD1-EPBF

IRG7PK35UD1-EPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PK35UD1-EPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Terminal Position: SINGLE;
Datasheet IRG7PK35UD1-EPBF Datasheet
In Stock908
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Surface Mount: NO
Nominal Turn Off Time (toff): 225 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 167 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 265 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 95 ns
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1400 V
Maximum Gate-Emitter Voltage: 30 V
Maximum VCEsat: 2.35 V
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Pricing (USD)

Qty. Unit Price Ext. Price
908 $2.980 $2,705.840

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