Infineon Technologies - IRG7RA13UTRPBF

IRG7RA13UTRPBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7RA13UTRPBF
Description	N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 4.7 V; Maximum Operating Temperature: 150 Cel;
Datasheet	IRG7RA13UTRPBF Datasheet
In Stock	430

IRG7RA13UTRPBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	40 A
Maximum Power Dissipation (Abs):	78 W
Maximum Collector-Emitter Voltage:	360 V
Maximum Gate-Emitter Threshold Voltage:	4.7 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

Pricing (USD)

Qty.	Unit Price	Ext. Price
430	-	-

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