IRG7RC10FDPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7RC10FDPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Collector Current (IC): 16.5 A; Maximum Gate-Emitter Voltage: 30 V;
Datasheet	IRG7RC10FDPBF Datasheet
In Stock	692

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	16.5 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	49 ns
Transistor Application:	POWER CONTROL
Maximum Turn On Time (ton):	104 ns
Maximum Gate-Emitter Threshold Voltage:	7 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	250 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	61 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	70 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	351 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	26 ns
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	30 V
Maximum VCEsat:	1.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
692	-	-

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