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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRG7RC10FDTRPBF |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Maximum Collector Current (IC): 16.5 A; Transistor Element Material: SILICON; |
| Datasheet | IRG7RC10FDTRPBF Datasheet |
| In Stock | 824 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 16.5 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 49 ns |
| Transistor Application: | POWER CONTROL |
| Maximum Turn On Time (ton): | 104 ns |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Nominal Turn Off Time (toff): | 250 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 61 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 70 ns |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 351 ns |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Fall Time (tf): | 26 ns |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Gate-Emitter Voltage: | 30 V |
| Maximum VCEsat: | 1.85 V |
