Infineon Technologies - IRG7T200CH12B

IRG7T200CH12B by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7T200CH12B
Description	N-Channel; Maximum Collector Current (IC): 200 A; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 750 ns; Maximum VCEsat: 2.2 V; Nominal Turn On Time (ton): 210000 ns;
Datasheet	IRG7T200CH12B Datasheet
In Stock	584

IRG7T200CH12B Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	750 ns
Maximum Collector Current (IC):	200 A
Maximum Collector-Emitter Voltage:	1200 V
Nominal Turn On Time (ton):	210000 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	2.2 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
584	-	-

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