Infineon Technologies - IRGC4064B

  1. Home
  2. Infineon Technologies - IRGC4064B
IRGC4064B by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGC4064B
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Package Body Material: UNSPECIFIED; No. of Terminals: 2;
Datasheet IRGC4064B Datasheet
In Stock216
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
216 - -

Popular Products

Category Top Products

FF300R12KE4HOSA1 by Infineon Technologies

FF300R12KE4HOSA1

Infineon Technologies

FF300R12KE4HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 800 ns turn off time. It operates at a max temperature of 150°C, has a collector-emitter voltage of 1200V, and can handle a max current of 460A. Ideal for high-power applications requiring fast switching capabilities.
CM300DY-12NF by Mitsubishi Electric

CM300DY-12NF

Mitsubishi Electric

Mitsubishi Electric's CM300DY-12NF is a N-CHANNEL IGBT with 2 elements, 7 terminals, and max IC of 300A. Ideal for power control applications with VCEsat of 2.2V, max VCE of 600V, and Pmax of 780W. Operates at up to 150°C temp with gate-emitter voltage of 20V.
IRG4PC50UDPBF by International Rectifier

IRG4PC50UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
IRG4BC20WPBF by International Rectifier

IRG4BC20WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Transistor Application: MOTOR CONTROL;
FS400R07A3E3H6BPSA1 by Infineon Technologies

FS400R07A3E3H6BPSA1

Infineon Technologies

Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
APT35GT120JU2 by Microsemi

APT35GT120JU2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 55 A; Package Style (Meter): FLANGE MOUNT;
FP100R06KE3BOSA1 by Infineon Technologies

FP100R06KE3BOSA1

Infineon Technologies

FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
FP15R06W1E3BOMA1 by Infineon Technologies

FP15R06W1E3BOMA1

Infineon Technologies

FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.
FGH50N6S2D by Onsemi

FGH50N6S2D

Onsemi

FGH50N6S2D by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 75A max collector current. It has a turn-off time of 180ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at a max temperature of 150°C.
BSM75GB120DN2HOSA1 by Infineon Technologies

BSM75GB120DN2HOSA1

Infineon Technologies

Infineon's BSM75GB120DN2HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max Collector-Emitter Voltage of 1200V and Max Collector Current of 75A, it offers fast switching with Nominal Turn Off Time of 520ns and Nominal Turn On Time of 100ns. The package style is FLANGE MOUNT with 7 terminals in an ISOLATED case connection.
FGD3040G2-F085 by Onsemi

FGD3040G2-F085

Onsemi

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
IKP20N65H5XKSA1 by Infineon Technologies

IKP20N65H5XKSA1

Infineon Technologies

IKP20N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and a Max Collector Current of 42A. It has a Nominal Turn Off Time of 218ns and Nominal Turn On Time of 28ns, making it ideal for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals and built-in diode configuration.
HGTG12N60A4D by Intersil

HGTG12N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Transistor Application: MOTOR CONTROL;
SGW20N60 by Siemens

SGW20N60

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
APT45GP120J by Microchip Technology

APT45GP120J

Microchip Technology

APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
FGA25N120ANTDTU by Onsemi

FGA25N120ANTDTU

Onsemi

FGA25N120ANTDTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 25A IC, and 312W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
FS150R12KT4P_B11 by Infineon Technologies

FS150R12KT4P_B11

Infineon Technologies

Infineon FS150R12KT4P_B11 IGBT, N-Channel type, with VCEsat of 2.1V and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and renewable energy systems due to its low turn-off time of 605ns. Operating temperature range from -40°C to 150°C ensures reliability in various environments.
FP100R06KE3 by Infineon Technologies

FP100R06KE3

Infineon Technologies

FP100R06KE3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 1.9V VCEsat. Its complex configuration makes it suitable for high-power applications like motor drives and inverters due to its 335W power dissipation capability.
IXXX300N60B3 by Littelfuse

IXXX300N60B3

Littelfuse

The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
HGT1S10N120BNS by Intersil

HGT1S10N120BNS

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR;