Infineon Technologies - IRGIB7B60KDPBF

IRGIB7B60KDPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGIB7B60KDPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Maximum Collector Current (IC): 12 A; Nominal Turn Off Time (toff): 220 ns;
Datasheet IRGIB7B60KDPBF Datasheet
In Stock417
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 26 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 220 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 39 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 43 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Fall Time (tf): 56 ns
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
417 $0.986 $411.162

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