IRGP4262DPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGP4262DPBF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Rise Time (tr): 45 ns;
Datasheet	IRGP4262DPBF Datasheet
In Stock	789

NAME	DESCRIPTION
Maximum Collector Current (IC):	60 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Rise Time (tr):	45 ns
Maximum Gate-Emitter Threshold Voltage:	7.7 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Maximum Power Dissipation (Abs):	250 W
Maximum Collector-Emitter Voltage:	650 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Fall Time (tf):	40 ns

Pricing (USD)

Qty.	Unit Price	Ext. Price
789	$2.740	$2,161.860

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