Infineon Technologies - IRGS10B60KDPBFTRR

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IRGS10B60KDPBFTRR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS10B60KDPBFTRR
Description N-Channel; Maximum Collector Current (IC): 35 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V; Minimum Operating Temperature: -55 Cel; Nominal Turn Off Time (toff): 294 ns;
Datasheet IRGS10B60KDPBFTRR Datasheet
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NAME DESCRIPTION
Nominal Turn Off Time (toff): 294 ns
Maximum Collector Current (IC): 35 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 4000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -55 Cel
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