Infineon Technologies - IRHE130

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IRHE130 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHE130
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (Abs) (ID): 8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRHE130 Datasheet
In Stock483
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 25 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 8 A
Maximum Drain Current (Abs) (ID): 8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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