Infineon Technologies - IRHF597130SCS

IRHF597130SCS by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHF597130SCS
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): CYLINDRICAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet	IRHF597130SCS Datasheet
In Stock	710

IRHF597130SCS Technical Details

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	75 ns
Maximum Drain Current (ID):	6.7 A
Maximum Pulsed Drain Current (IDM):	26.8 A
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	170 ns
JESD-30 Code:	O-CBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.24 ohm
Avalanche Energy Rating (EAS):	240 mJ
JEDEC-95 Code:	TO-205AF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	MIL-19500
Maximum Drain Current (Abs) (ID):	6.7 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
710	-	-

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