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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHG57110PBF |
| Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Shape: RECTANGULAR; No. of Terminals: 14; |
| Datasheet | IRHG57110PBF Datasheet |
| In Stock | 346 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 37 ns |
| Maximum Drain Current (ID): | 1.8 A |
| Maximum Pulsed Drain Current (IDM): | 6.4 A |
| Surface Mount: | NO |
| No. of Terminals: | 14 |
| Maximum Power Dissipation (Abs): | 1.4 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| Maximum Turn Off Time (toff): | 45 ns |
| JESD-30 Code: | R-CDIP-T14 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .29 ohm |
| Avalanche Energy Rating (EAS): | 130 mJ |
| JEDEC-95 Code: | MO-036AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | RH - 100K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 1.8 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
