IRHLF7970Z4SCS by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHLF7970Z4SCS
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Additional Features: CMOS COMPATIBLE; Transistor Element Material: SILICON;
Datasheet	IRHLF7970Z4SCS Datasheet
In Stock	896

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.5 A
JEDEC-95 Code:	TO-205AF
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	CMOS COMPATIBLE
Maximum Drain-Source On Resistance:	1.25 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
896	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.