IRHLG77214 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHLG77214
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 4; Package Body Material: PLASTIC/EPOXY;
Datasheet	IRHLG77214 Datasheet
In Stock	897

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.8 A
Maximum Pulsed Drain Current (IDM):	3.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	14
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T14
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	1.1 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	50.4 mJ
JEDEC-95 Code:	MO-036AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.8 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
897	-	-

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