IRHM7C50SE by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHM7C50SE
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain-Source On Resistance: .6 ohm; No. of Elements: 1;
Datasheet	IRHM7C50SE Datasheet
In Stock	416

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	10.4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	S-MSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.6 ohm
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	10.4 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
416	-	-

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