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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHN9150A |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Form: NO LEAD; Transistor Application: SWITCHING; |
| Datasheet | IRHN9150A Datasheet |
| In Stock | 594 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 210 ns |
| Maximum Drain Current (ID): | 22 A |
| Maximum Pulsed Drain Current (IDM): | 88 A |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 150 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| Maximum Turn Off Time (toff): | 380 ns |
| JESD-30 Code: | R-CBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .085 ohm |
| Avalanche Energy Rating (EAS): | 500 mJ |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | RADIATION HARDENED |
| Reference Standard: | RH - 100K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 22 A |
